BD647 NPN Darlington Transistor Datasheet
the B647 is a silicon PNP transistor, Uce = 80V, Ic = 1A, applications: general purpose
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The B647 is -80V, -1A, Silicon PNP Epitaxial Transistor. A PNP transistor is a type of bipolar junction transistor (BJT) with a different structure and polarity compared to an NPN transistor. Here are characteristics of PNP transistors: 1. Structure
2SB647 PNP General Purpose Transistor Datasheet
Transistor Catalog 2SB647 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SB647 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.9 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 80 V Maximum Collector Current |Ic max|: 1 A Max.
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Description: Silicon PNP Epitaxial. 38 Results. Datasheet: 47Kb/8P. Manufacturer: Renesas Technology Corp.
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isc Silicon NPN Darlington Power Transistor BD647DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min) (BR)CEOHigh DC Current Gain: h = 750 (Min) @I = 3AFE CLow Saturation VoltageComplement to Type BD648Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-.
B647_135369.PDF Datasheet Download
B647,! -ˇ . ///, . ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2SB647TO-92MODBulk 2SB647-TATO-92MODTape 2SB647ATO-92MODBulk 2SB647A-TATO-92MODTape B647 500pcs/Bag. TO-92MODPlastic-Encapsulate Transistors www.jscj-elec.com 1 Rev. - 1.0 ˘ ˇ ˇ
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1. Structure: A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector). 2. Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector.
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2S B647: Silicon PNP Transistor: Hitachi Semiconductor: 3: 2S B647: Transistors>Amplifiers/Bipolar: Renesas: 4: 2S B647-B: TO-92MOD Plastic-Encapsulate Biploar Transistors: Micro Commercial Components: 5: 2S B647-C: TO-92MOD Plastic-Encapsulate Biploar Transistors: Micro Commercial Components: 6: 2S B647-D: TO-92MOD Plastic-Encapsulate Biploar.
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B647 Hoja de datos, B647 datasheet, Hitachi Semiconductor - PNP Transistor - 2SB647, Hoja Técnica, B647 pdf, dataark, wiki, arduino, regulador, amplificador, circuito, Distribuidor PDF B647 Data sheet ( Hoja de datos ) Número de pieza: B647: Descripción: PNP Transistor - 2SB647:
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1. Structure: A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector). 2. Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector.
2SB647 B647 TRANSISTOR PNP 1A 80V TO92L
B647 datasheet, B647 PDF, B647 Pinout, Equivalent, Replacement - PNP Transistor - 2SB647 - Hitachi Semiconductor, Schematic, Circuit, Manual. B647 Datasheet PDF - PNP Transistor - 2SB647. What is B647? This electronic component, produced by the manufacturer "Hitachi Semiconductor",.
B647 datasheet(3/3 Pages) JINGDAO PNP Power Transistor
B647 Datasheet : PNP Power Transistor, B647 PDF Download Shenzhen Jingdao Electronic Co.,Ltd, B647 Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits Electronic component search and free download site.
B647 Datasheet PDF ( Pinout ) PNP Transistor 2SB647
Transistor Catalog B647 Datasheet, Equivalent, Cross Reference Search Type Designator: B647 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.8 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 5 V
2SB647 2SD667 B647 D667 PNP Power Transistor amplifier
Description PNP Power Transistor B647 Datasheet (HTML) - Shenzhen Jingdao Electronic Co.,Ltd B647 Product details Features： High switching speed Wide safe operation area Applications ： Electronical Ballasts for fluorescent lighting Charger and Switch mode power supplies Similar Part No. - B64 7 More results Similar Description - B647
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Features / Technical Specifications: Package Type: TO-92L / TO-92MOD Transistor Type: PNP Max Collector Current (I C ): -1A Max Collector-Emitter Voltage (V CE ): -80V Max Collector-Base Voltage (V CB ): -120V Max Emitter-Base Voltage (VEBO): -6V Max Collector Dissipation (Pc): 0.9 Watt Max Transition Frequency (fT): 140 MHz
Datasheet BC337 BC337, BC33725, BC33740 Amplifier Transistors NPN Silicon onsemi Features
PDF Download HTML Chat AI 2SB647 Datasheet (PDF) - Hitachi Semiconductor Description Silicon PNP Epitaxial 2SB647 Datasheet (HTML) - Hitachi Semiconductor 2SB647 Product details 1. Low frequency power amplifier 2. Complementary pair with 2SD667/A Similar Part No. - 2SB647 More results Similar Description - 2SB647 More results